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NTB6410AN, NTP6410AN,
NVB6410AN
N-Channel Power MOSFET
100 V, 76 A, 13 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
?
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
100 V
http://onsemi.com
R DS(ON) MAX
13 m W @ 10 V
N ? Channel
I D MAX
(Note 1)
76 A
D
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
100
$ 20
V
V
G
Continuous Drain
Current R q JC
Power Dissipation
R q JC
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
76
54
188
A
W
4
S
4
Pulsed Drain Current
t p = 10 m s
I DM
305
A
1
2
Operating Junction and Storage Temperature
Range
T J , T stg
? 55 to
+175
° C
TO ? 220AB
3
D 2 PAK
Drain
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 57.7 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
I S
E AS
T L
76
500
260
A
mJ
° C
1
2
3
4
CASE 221A CASE 418B
STYLE 5 STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Parameter
Symbol
Max
Unit
3
1
3
Source
Gate
Source
Junction ? to ? Case (Drain) Steady State R q JC 0.8 ° C/W
Junction ? to ? Ambient (Note 1) R q JA 32
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
6410ANG
AYWW
2
Drain
NTB
6410ANG
AYWW
2
Drain
6410AN = Specific Device Code
G = Pb ? Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
January, 2012 ? Rev. 1
1
Publication Order Number:
NTB6410AN/D
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